Process kit and target for substrate processing chamber

ABSTRACT

A process kit comprises a ring assembly that is placed about a substrate support in a substrate processing chamber to reduce deposition of process deposits on the chamber components and on an overhang edge of the substrate. The process kit includes a deposition ring, cover ring, and anti-lift bracket, and can also include a unitary shield. A target is also described.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 60/732,324 filed Oct. 31, 2005, which is incorporated herein byreference in its entirety.

BACKGROUND

Embodiments of the present invention relate to process kit and targetfor a substrate processing chamber.

In the processing of substrates, such as semiconductor wafers anddisplays, a substrate is placed in a process chamber and processingconditions are set in the chamber to deposit or etch material on thesubstrate. A typical process chamber comprises chamber components thatinclude an enclosure wall that encloses a process zone, a gas supply toprovide a gas in the chamber, a gas energizer to energize the processgas to process the substrate, a substrate support to hold the substrate,and a gas exhaust to remove spent gas and maintain a gas pressure in thechamber. Such chambers can include, for example, CVD, PVD and etchingchambers. In a PVD chamber, a target is sputtered to cause sputteredtarget material to deposit on a substrate facing the target. In thesputtering process, an inert or reactive gas is supplied into thechamber, the target is typically electrically biased, and the substratemaintained at an electrical floating potential, to generate a plasma inthe chamber which causes sputtering of the target.

The PVD chamber can include a process kit comprising chamber componentswhich are positioned the substrate support to reduce the formation ofPVD deposits on the interior chamber walls or other regions. A typicalPVD chamber process kit can include, for example, deposition, cover,and/or shadow rings, all of which are located about the periphery of thesubstrate. Various configurations of rings are arranged to receivesputtering deposits, which would otherwise accumulate on the sidesurfaces of the support or on the exposed backside surfaces of thesubstrate. The process kit can also include chamber shields and linerswhich protect the sidewalls of the chamber by serving as a receivingsurface to receive PVD sputtering deposits which would otherwise depositon the sidewalls of the chamber. The process kit components also reducethe accumulation of sputtered deposits on these surfaces, which wouldotherwise eventually flake off to form contaminant particles thatdeposit on the substrate. The kit components also reduce erosion of theinternal chamber structures by the energized plasma. They can also bedesigned to be easily removable for cleaning of accumulated deposits.After processing of a batch of substrates, for example, 1000 substrates,the process kit components are typically removed and cleaned with anacidic solution comprising for example, HF and HNO3, to remove thesputtered deposits accumulated on the kit components during thesubstrate process cycles.

It is desirable to have a process kit comprising components that areshaped and arranged in relationship to one another to reduce the amountsof sputtered deposits formed on the internal walls of the chamber.Reducing the accumulated deposits allows a greater number of substratesto be sequentially processed in the chamber without requiring shutdownor dismantling of the chamber for cleaning. Each time, the chamberrequires cleaning, the resultant downtime of the chamber increases thecost of processing the substrate. Thus it is desirable to maximize theamount of time the chamber can be operated to sputter material onto thesubstrate without shutting down the chamber to clean its internalsurfaces.

Furthermore, in certain PVD processes, such as for example, aluminum PVDprocesses, the sputtered aluminum deposits accumulate in the gapsbetween the various deposition, cover, and other rings around theperiphery of the substrate, and also form on the backside of thesubstrate. The accumulated sputtered deposits cause the substrate tostick to the deposition ring causing substrate damage when the substrateis attempted to be removed from the support. It is desirable to haverings which can reduce deposition on the backside of the substrate andside surface of the support without accumulating deposits on portions ofthe rings that cause the substrate to stick to the rings. It is alsodesirable to prevent a partially stuck deposition ring to rise with thesubstrate when the substrate is lifted from the support to reduce damageto the substrate and/or deposition ring.

Another problem arises when the liners and shields surrounding thesubstrate heat up with exposure to the sputtering plasma in the chamber.Typically, the shields and liners do not exchange a sufficient amount ofheat with their surrounding chamber components in the low pressureenvironment within the chamber to lower the temperature of thesecomponents to acceptable levels. Excessive heating of these componentsis detrimental because thermal expansion of the components causesthermal stresses that result in peeling or spalling of the sputtereddeposits formed on the shields and liners after a process cycle iscompleted. Thus, it is desirable to maintain the shields and liners atreduced or low temperatures during processing of the substrate.

DRAWINGS

These features, aspects and advantages of the present invention willbecome better understood with regard to the following description,appended claims, and accompanying drawings, which illustrate examples ofthe invention. However, it is to be understood that each of the featurescan be used in the invention in general, not merely in the context ofthe particular drawings, and the invention includes any combination ofthese features, where:

FIG. 1 is a schematic sectional side view of a substrate processingchamber having an embodiment of the process kit;

FIG. 2 is a sectional side view of the process kit shown in FIG. 1;

FIG. 3 is a perspective view of the process kit of FIG. 2;

FIG. 4A is a perspective view of the retaining bracket for the anti-liftbracket;

FIG. 4B is a perspective view of the backside of the support showing thepositioned retaining bracket for the anti-lift bracket;

FIG. 5 is a perspective view of the anti-lift bracket sliding onto theholding post in a recessed pocket on a deposition ring which surroundsthe substrate support;

FIG. 6 is a perspective view of the anti-lift bracket after it is fittedonto the holding post of the deposition ring which is around thesubstrate support;

FIG. 7 is an exploded perspective view of the anti-lift bracket slidingonto a ceramic isolator which couples to a prong of the restraint beamwith a pin holding the assembly together;

FIG. 8 is a perspective view of the anti-lift bracket, ceramic isolator,pin, and restraint beam, as assembled onto a substrate support 130;

FIG. 9 is a top sectional view of a heat exchanger showing the polygonalconduit therein; and

FIG. 10 is a graph of modeling results obtained for a scaled geometry ofthe process kit showing the thickness of deposits formed on thecomponents as a function of distance from the substrate and support.

DESCRIPTION

An example of a suitable process chamber 100 capable of processing asubstrate 104 is shown in FIG. 1. The chamber 100 comprises enclosurewalls 108 that enclose a process zone 106, the walls 108 includingsidewalls 116, a bottom wall 120, and a ceiling 124. The chamber 100 canbe a part of a multi-chamber platform (not shown) having a cluster ofinterconnected chambers connected by a robot arm mechanism thattransfers substrates 104 between the chambers 106. In the version shown,the process chamber 100 comprises a sputter deposition chamber, alsocalled a physical vapor deposition or PVD chamber, which is capable ofsputter depositing material on a substrate 104, such as one or more oftantalum, tantalum nitride, titanium, titanium nitride, copper,tungsten, tungsten nitride and aluminum.

The chamber 100 comprises a substrate support 130 to support thesubstrate 104 which comprises a pedestal 134. The pedestal 134 has asubstrate receiving surface 138 that receives and supports the substrate104 during processing, and may include an electrostatic chuck or aheater, such as an electrical resistance heater or heat exchanger (notshown). In operation, a substrate 104 is introduced into the chamber 100through a substrate loading inlet (not shown) in the sidewall 116 of thechamber 100 and placed on the substrate support 130. The support 130 canbe lifted or lowered by support lift bellows and/or a lift fingerassembly (not shown) can be used to lift and lower the substrate ontothe support 130 during placement of a substrate 104 on the support 130.The pedestal 134 can be maintained at an electrically floating potentialor grounded during plasma operation.

The chamber 100 further comprises a sputtering target 140 comprising asputtering surface 142 facing the substrate 104, which comprises thematerial to be sputtered onto the substrate 104. The target 140 iselectrically isolated from the chamber 100 by an isolator 144 which istypically made from a dielectric or insulator material. The target 140is connected to a target power supply 148 which applies a bias voltageto the target 140 relative to a shield 150 which is in front of thewalls of the chamber components, and/or the support 130 which iselectrically floated. The target 140, shield 150, support 130, and otherchamber components connected to the target power supply 148 operate as agas energizer 152 to form a plasma of the sputtering gas. The gasenergizer 152 can also include a source coil 153 which is used togenerate a plasma in the chamber 100 by application of a current throughthe coil. The generated plasma energetically impinges upon and bombardsthe sputtering surface 142 of the target 140 to sputter material off thesurface 142 onto the substrate 104.

The sputtering gas is introduced into the chamber 100 through a gasdelivery system 160 provides gas from a gas supply 162 via conduits 164having gas flow control valves 166, such as a mass flow controllers, topass a set flow rate of the gas therethrough. The gases are fed to amixing manifold (also not shown) in which the gases are mixed to from adesired process gas composition and fed to a gas distributor 168 havinggas outlets in the chamber 100. The process gas may comprise anon-reactive gas, such as argon or xenon, which is capable ofenergetically impinging upon and sputtering material from a target. Theprocess gas may also comprise a reactive gas, such as one or more of anoxygen-containing gas and a nitrogen-containing gas, that are capable ofreacting with the sputtered material to form a layer on the substrate104. Spent process gas and byproducts are exhausted from the chamber 100through an exhaust 170 which includes exhaust ports 172 that receivespent process gas and pass the spent gas to an exhaust conduit 174having a throttle valve 176 to control the pressure of the gas in thechamber 100. The exhaust conduit 174 is connected to one or more exhaustpumps 178. Typically, the pressure of the sputtering gas in the chamber100 is set to sub-atmospheric levels, such as a vacuum environment, forexample, gas pressures of 1 mTorr to 400 mTorr.

The chamber 100 is controlled by a controller 180 that comprises programcode having instruction sets to operate components of the chamber 100 toprocess substrates 104 in the chamber 100. For example, the controller180 can comprise program code that includes a substrate positioninginstruction set to operate the substrate support 130 and substratetransport; a gas flow control instruction set to operate gas flowcontrol valves to set a flow of sputtering gas to the chamber 100; a gaspressure control instruction set to operate the exhaust throttle valveto maintain a pressure in the chamber 100; a gas energizer controlinstruction set to operate the gas energizer to set a gas energizingpower level; a temperature control instruction set to control atemperature control system to set temperatures of various components inthe chamber 100; and a process monitoring instruction set to monitor theprocess in the chamber 100.

The chamber comprises a process kit 200 comprising various componentsthat can be easily removed from the chamber 100, for example, to cleansputtering deposits off the component surfaces, replace or repair erodedcomponents, or to adapt the chamber for other processes. In one version,the process kit 200 comprises a ring assembly 202 for placement about aperipheral wall 204 of the substrate support 130 that terminates beforean overhanging edge 206 of the substrate. The ring assembly 202comprises a deposition ring 208 and a cover ring 212 that cooperate withone another to reduce formation of sputter deposits on the peripheralwalls 204 of the support 130 or the overhanging edge 206 of thesubstrate 104.

The deposition ring 208 comprises an annular band 216 that extends aboutand surrounds the peripheral wall 204 of the support 130 as shown inFIGS. 2 and 3. The annular band 216 comprises an inner lip 218 whichextends transversely from the band and is substantially parallel to theperipheral wall 204 of the support 130. The inner lip 218 terminatesimmediately below the overhanging edge 206 of the substrate 104. Theinner lip 218 defines an inner perimeter of the deposition ring 208which surrounds the periphery of the substrate 104 and support 130 toprotect regions of the support 130 that are not covered by the substrate104 during processing. For example, the inner lip 218 surrounds and atleast partially covers the peripheral wall 204 of the support 130 thatwould otherwise be exposed to the processing environment to reduce oreven entirely preclude deposition of sputtering deposits on theperipheral wall 204. Advantageously, the deposition ring 208 can beeasily removed to clean sputtering deposits from the exposed surfaces ofthe ring so that the support 130 does not have to be dismantled to becleaned. The deposition ring 208 can also serve to protect the exposedside surfaces of the support 130 to reduce their erosion by theenergized plasma species. The deposition ring 208 is typically made froma metal, such as stainless steel or aluminum, or can be made from aceramic material, such as aluminum oxide.

In the version shown in FIGS. 2 and 3, the annular band 216 of thedeposition ring 208 has a raised ridge 224 that extends along thecentral portion of the band 216. The raised ridge 224 has a flat topsurface 228 which is spaced apart from the cover ring 212 to form aconvoluted gap 229 therebetween which acts an a labyrinth to reducepenetration of plasma species into the convoluted gap. An open innerchannel 230 lies between the inner lip 218 and the raised ridge 224. Theopen inner channel 230 extends radially inward to terminate at leastpartially below the overhanging edge 206 of the substrate 104. The innerchannel 230 has a first rounded corner 232 joining to the inner lip 218and a gently sloped surface 234 joining to the raised ridge 224. Thesmooth corner 232 and sloped surface 234 facilitate the removal ofsputtering deposits from these portions during cleaning of thedeposition ring 208. The deposition ring 208 also has a ledge 236 whichis located radially outward of the raised ridge 224 and serves tosupport the cover ring 212. In addition, a U-shaped channel 237 isprovided between the raised ridge 224 and the ledge 236 to form aconvoluted passageway therebetween which further prevents the flow thepassage of plasma or gaseous species though the passageway therebyreducing the deposition of process deposits in the regions radiallyoutward of the passageway. Thus the contour and profile of thedeposition ring is shaped to reduce passage of process deposits throughthese regions. Unlike prior art designs, pins are not needed in thedeposition ring 208 to retain the substrate 104 in the event that thesubstrate 104 slides or is misplaced in the chamber 100, due to accuratepositioning of the substrate in the chamber during its transportationinto the chamber.

The cover ring 212 of the ring assembly 202 encircles and at leastpartially covers the deposition ring 208 to receive, and thus, shadowthe deposition ring 208 from the bulk of the sputtering deposits. Thecover ring 212 is fabricated from a material that can resist erosion bythe sputtering plasma, for example, a metallic material such asstainless steel, titanium or aluminum, or a ceramic material, such asaluminum oxide. In one version, the cover ring 212 is fabricated fromtitanium. The cover ring 212 comprises an annular wedge 244 which has afooting 246 which rests on the ledge 236 of the deposition ring 208 tosupport the cover ring 212. The footing 246 extends downwardly from thewedge 244 to press against the deposition ring 208 substantially withoutcracking or fracturing the ring 208.

The annular wedge 244 of the cover ring 212 has an inclined surface 248that serves as a boundary to contain the sputtering plasma within theprocess zone between the target and the support 130. The inclinedsurface 248 provides a smooth and continuous surface on which sputteringdeposits can deposit and be easily removed. In one version, the inclinedsurface 248 is inclined at an angle relative to an axis which isperpendicular to the flat plane formed by the processing surface of thesubstrate 104. In one version, the angle is at least about 60°, and canbe even from about 65 to about 85°, or even about 80°. The angle of theinclined surface of the cover ring 212 is designed to minimize thebuildup of sputter deposits nearest to the overhanging edge 206 of thesubstrate 104, which would otherwise negatively impact the depositionuniformity obtained across the substrate 104.

The wedge 244 tapers to a projecting brim 252 which overlies the innerchannel 230 of the deposition ring 208. The projecting brim 252terminates in a rounded edge 256 and has a planar bottom surface 260.The projecting brim 252 reduces deposition of sputtering deposits on theopen inner channel of the deposition ring 208. Advantageously, theprojecting brim 252 projects a distance corresponding to at least abouthalf the width of the open inner channel of the deposition ring 208. Forexample, if the inner channel 230 has a width of at least about 12 mm,the projecting brim 252 has a width of at least about 6 mm. Theprojecting brim 252 projects over the open inner channel 230 of thedeposition ring 208 to reach closer to the peripheral edge 206 of thesubstrate cover a portion of the open inner channel 230 of thedeposition ring 208. In addition, the projecting brim 252 has a raisedridge 253 which has an external shape with a profile which matches andfollows the contour of the surface 234 of the underlying deposition ring208. This shaped and closely matching contoured features inhibit thedeposition of sputtering deposits on the peripheral overhang edge 206 ofthe substrate and also reduces deposits on the peripheral walls 204 ofthe support 130. They also force deposition to occur in the surface ofthe channel 230 by inhibiting the flow of gaseous plasma species andsputtered deposits over the peripheral edge 204. Thus, the contour ofthe projecting brim 252 is sized, shaped, and positioned to cooperatewith and complement the open inner channel 230 of the deposition ring208 to form a convoluted and constricted flow path between the coverring 212 and deposition ring 208 to inhibit the flow of process depositsonto the peripheral edge 204. The constricted flow path also restrictsthe build-up of low-energy sputter deposits on the mating surfaces ofthe deposition ring 208 and cover ring 212, which would otherwise causethem to stick to one another or to the peripheral overhang edge 206 ofthe substrate 104. The open inner channel 230 of the deposition ring 208which extends underneath the substrate overhang edge 206 is designed inconjunction with shadowing from the projecting brim 252 of the coverring 208 to collect, for example, a minimum of 3900 μm of aluminumsputter deposits in an aluminum sputtering chamber 100, while reducingor even substantially precluding sputter deposition on the matingsurfaces of the two rings 208, 212.

The cover ring 212 also has a pair of cylindrical walls 260 that extenddownwardly from the annular wedge 244. The cylindrical walls 260 arelocated radially outward of the footing 246 of the wedge 244. Thecylindrical walls 260 comprise an inner wall 260 a and an outer wall 260b, the inner wall 260 a having a smaller height than the outer wall 260b. The radially internal surface 262 of the inner wall 260 a is slopedto match a slope angle of the radially outer surface 264 of thedeposition ring 208 to form yet another convoluted pathway 266 whichimpedes travel of plasma species and glow discharges to the surroundingarea. Typically, the height of the outer wall 260 a is at least about1.2 times the height of the inner wall 260 b. For example, for a coverring 212 having an inner radius of about 154 mm, the height of the outerwall 160 a is from about 25 mm, and the height of the inner wall 260 bis from about 19 mm.

In another version, the process kit 200 also includes an anti-liftbracket 270 is used to retain the deposition ring 208 about theperiphery of the substrate support 130 in the chamber 100, as shown inFIGS. 3-6. The anti-lift bracket 270 cooperates with additionalstructural features of the deposition ring 208 and support 130. Forexample, the deposition ring 208 comprises two peripheral recessedpockets 274 with holding posts 278 extending out from the pockets 274 toreceive a pair of anti-lift brackets 270 on either side, one side beingshown in FIG. 5. The pairs of pockets are located diametrically opposingone another across the support 130. In this version, a restraint beam280 is also mounted on a backside surface 276 of the support 130 to holdonto the anti-lift bracket 270, as shown in FIGS. 4A and 4B. Therestraint beam 280 comprises two opposing flat prongs 282 a,b whichextend radially outward of a circular ring 284 in the backside surface276 of the support 130. The two opposing flat prongs 282 a,b are mountedon the vertical arms 286 a,b which are joined to the circular ring 284.The circular ring 284 is shaped and sized to fit into a recess 287 inthe backside of the support 130.

The anti-lift bracket 270 comprises a block 290 comprising athrough-channel 294 which receives a prong end 282 a of the restraintbeam 280 as shown in FIGS. 5 and 6. The through-channel 294 comprises anoval shaped slot 296 sized larger than the prong 282 a of the restraintbeam 280. A retaining hoop 298 attached to the block 290 is sized toslide over a holding post 278 in a recessed pocket 274 of the depositionring 208. During assembly, the anti-lift bracket 270 is broughtalongside the outer periphery of the deposition ring 208 and the slot296 of the through-channel 294 is slid onto a prong 282 of the restraintbeam 280 as shown by the arrows 283 so that the access hole 299 of theretaining hoop 298 is directly above the holding post 278 as shown inFIG. 5. The anti-lift bracket 274 is then lowered, as shown by the arrow285, so that the retaining hoop 298 drops down and encircles the holdingpost 278 allowing the weight of the block 290 of the bracket 270 tostably hold down the deposition ring 208 as shown in FIG. 6. Theanti-lift bracket 270 only engages the restraint beam 280 when thedeposition ring 208 is pulled upwards, for example, when the depositionring becomes stuck to the substrate 104. This design minimizes thethermal and mechanical strain on the ceramic deposition ring 208 andcover ring 212 in normal use.

Another version of an assembly comprising the anti-lift bracket 270which is used to retain the deposition ring 208 about the periphery ofthe substrate support 130 in the chamber 100, is shown in FIGS. 7 and 8.In this version, the anti-lift bracket 270 is attached to a ceramicisolator 400 which then couples to a flat prongs 282 a,b of therestraint beam 280. The anti-lift bracket 270 slides onto a ledge 402which extends out of a block 404 of the ceramic isolator 400. Theceramic isolator 400 serves to electrically isolate the restraint beam280 from the other components by providing an insulating member in theelectrical pathway between the support 130 and the deposition ring 208.When the deposition ring 208 is made from a metal, interrupting theelectrical pathway, serves to reduce electrical interference betweenthese two structures. The block 404 of the ceramic isolator 400 also hasa recessed surface 408 for resting the restraint beam 280. Athrough-hole 410 in the block 404 is provided for the pin 414 to connectthe ceramic isolator 400 to the matching holes 418 a,b in the facing andparallel extensions 420 a,b of the prong 282 a of the restraint beam280. The pin 414 has two reduced diameter posts 418 a,b which are passedthrough the through hole and a flat edge which rests against the surfaceof the parallel extensions 420 a,b of the prong 282 a. The pin 414 canbe made from a metal, such as stainless steel. The ledge 402 of theceramic isolator extends radially outward from the block 404 and has aprotrusion 424 which acts as a stop against a receiving surface 430 ofthe anti-lift bracket 270. The ceramic isolator 400 is typically machinefrom a ceramic, such as aluminum oxide. It should be noted that whileone ceramic structure is described, other ceramic structures blocks canalso be placed in the pathway between the restraint beam 280 and theanti-lift bracket 270 to further isolate the structures, such as aceramic block (not shown) placed between the beam 280 and the substratesupport 130 at their interface.

The process kit 200 also includes a unitary cylindrical shield 150 thatencircles the sputtering surface of a sputtering target that faces thesubstrate support 130, the outer periphery of the substrate support 130,and the shadows the sidewalls 116 of the chamber 100. The shield 150serves to reduce deposition of sputtering deposits originating from thesputtering surface of the sputtering target 140 on the surfaces ofsupport 130, and the sidewalls 116 and bottom wall 120 of the chamber100. The shield 150 comprises a cylindrical outer band 314 having adiameter sized to encircle the sputtering surface 142 of the sputteringtarget 140 and the substrate support 130. The outer band 314 has anupper end 316 and a bottom end 318. The upper end 316 has a radiallyoutwardly tapered surface 320 adjacent to a sloped peripheral surface322 of the sputtering target 140. The shield 150 further comprises abase plane 324 extending radially inward from the bottom end 318 of theouter band 314 to join a cylindrical inner band 328 that at leastpartially surrounds the peripheral edge 204 of the substrate support130. The inner band 328 comprises a height that is smaller than theouter band 314, for example, the inner band 328 has a height which is0.8 times smaller than the height of the outer band 314. The gapsbetween the inner and outer bands 328, 314, respectively, and the outerwall 260 b and inner wall 260 a of the cover ring 212 again serve tohinder and impede ingress of plasma species into this region.

The outer band 314, base plate 324 and inner band 328 of the unitaryshield 150 comprise a unitary monolith structure that is a single piece.For example, the entire shield 150 can be made from 300 series stainlesssteel. This is advantageous over prior shields which included multiplecomponents, often two or three separate pieces to make up the completeshield, which makes it more difficult and laborious to remove the shieldfor cleaning. Also, the single piece shield 150 has a continuous surface330 exposed to the sputtering deposits without interfaces or cornersthat are more difficult to clean out. Also, the single piece shield 150is more thermally uniform than multiple shields, both for heating duringthe periodic maintenance as well as cooling during process when theplasma is heating the shield/s. The single piece shield 150 has only onethermal interface to the heat exchanger 330. The single piece shield 150also shields the chamber walls 108 from sputter deposition duringprocess cycles. The shield 150 also creates a contoured gap in theregion of the target 140 referred to as the “darkspace” to help shapethe plasma while preventing arcing between target 140 and chamber 100.

A heat exchanger 330 was used to cool the shield 150 to reduce thethermal expansion stresses. Portions of the shield 150 can becomeexcessively heated by exposure to the plasma formed in the substrateprocessing chamber. Excessive heating of the shield 150 results in itsthermal expansion which causes sputtering deposits formed on the shieldto flake off from the shield to fall upon and contaminate the substrate104. The heat exchanger 330 comprises a plate 332 made of metal, such asstainless steel. The plate 332 has an inner perimeter 334 comprising acircular aperture 336 sized to fit around the cylindrical shield 150,and an outer perimeter 338 comprising hexagonal sides 340, as shown inFIG. 9.

The heat exchanger 330 has a polygon conduit 334 to flow heat exchangefluid from a fluid source (not shown) therethrough to cool the plate330. The polygon conduit 334 comprises a plurality of legs 344 that areinterconnected in a polygonal pattern around the circular aperture 336.The legs 344 a-h which are each drilled at an acute angle starting froma hexagonal side 340 of the outer perimeter of the plate 332, the acuteangles being from about 20 to about 45°. The conduit 334 also compriseschannels 342 a-c that are each covered by a cover plate 345 a-c whichhas an oval O-ring 347 a-c in a groove 349 a-c in the plate 345 a-c toseal the interface. The polygonal conduit 334 also has an inlet 346 andoutlet 348 to receive and pass out the heat exchange fluid. The inletand outlet 346, 348 comprise channels 352 a,b that feed into a manifold350.

The heat exchange fluid is flowed through the polygonal conduit 330 toexchange heat with the shield 150 and control its temperature. Asuitable heat exchange fluid may be, for example, water. Controlling thetemperature of the shield 150 reduces expansion of the shield in theplasma environment limiting the flaking of the sputtering deposits fromthe shield. Fastening the shield 150 to the heat exchanger 330 providesbetter heat transfer between the shield and the heat exchanger plate.The shield 150 is fastened to the heat exchanger by a fastener 358, andin this version, the shield comprises a ledge 360 having a substantiallyvertical opening 362 extending therethrough. The fastener 358 is shapedand sized to pass through the opening 362 in the ledge 360 to fasten theshield 150 to the heat exchanger 330. Advantageously, the heat exchanger330 integrates the source coil 153 and target 140 to the chamber 100while also holding the shield 150. Water-cooling also provides greaterthermal stability of the single piece shield 150 during the process.

The sputtering target 140 comprises a backing plate 370, typically madefrom a high strength aluminum alloy, which supports a sputtering plate374 comprising the sputtering surface 142. The backing plate 370 of thetarget 140 is separated and the electrically isolated from the chamber100 by the isolator 144 which is typically a ring made from a ceramicmaterial, such as aluminum oxide. The sputtering plate 374 is composedof a high purity sputtering material to be sputtered onto the substrate104, such as for example, aluminum, tantalum, titanium, and other suchmetals, typically at a purity of 99.99% or higher. The sputtering plate374 comprises a perimeter with a sloped edge 322 adjacent to the slopedsurface 320 of the shield 150, which defines a gap 380 therebetweenwhich serves as another plasma retarding convoluted labyrinth.

In one version, the backplate of the target 140 comprises a peripheralledge 390 which extends beyond the radius of the sputtering plate 374.The peripheral ledge 390 supports the target 140 by resting on theisolator 144 and can be fastened to the isolator 144 or the chambersidewall 116. The peripheral ledge 390 extends beyond the sloped edge322 of the sputtering plate 374 and comprises an outer footing section392 which rests on the isolator 344 in the chamber 100. The peripheralledge 390 comprises an inner bump 394 which is shaped and sized toreduce deposition of sputtering deposits on the isolator 144 and shield150. The bump 394 in combination with a preceding groove 396 reducesplasma formation and the deposition of sputtering process deposits onundesired areas of the chamber walls 108, isolator 144 and heatexchanger 330. The bump 394 is shaped, sized and positioned to inhibitthe flow or migration of plasma and sputtered species through the gapbetween the target 140 and the isolator 144. In particular, the bump 394impedes the penetration of low-angle sputtered deposits into the gapbetween the target and the isolator. The bump 394 comprises a curvedcross-section with a height of from about 1.5 to about 2 mm.

The various components of the process kit 200 and the target 140significantly increase the number of process cycles and process on-timethat the process kit can be used in the chamber without removing theprocess kit for cleaning. This is accomplished by reducing the amount ofsputtering deposits formed on the components around the substrate whichare difficult to clean. The components of the process kit 200 and target140 are designed to allow increased power and pressure in the sputteringzone 106 to yield higher deposition throughput by reducing thetemperature in the darkspace region which is near the upper end 316 ofthe shield 150 and near the target 140. It also improves the thermaluniformity of the shield 150 using the heat exchanger 330. In addition,the process kit 200 is designed to allow at least 85% more aluminum tobe deposited in the chamber 100 before the kit 200 has to be changed,and therefore a maintenance cycle performed. This is a significantimprovement in the uptime of the chamber and also increases processthroughput.

FIG. 10 is a graph of modeling results obtained for a scaled geometry ofthe process kit in aluminum sputter deposition showing the thickness ofdeposits formed on the deposition ring 208 and cover ring 212 as afunction of distance from the substrate 104 and support 130. Themodeling program was PVD Pro™ program and it uses parameters for thetype of metal being deposited as well as the geometry of the target andother chamber components. The model allowed the comparison of severaldifferent configurations for the features of, and position of the coverring 212 and deposition ring 208. This allowed optimization for minimumbuildup of aluminum deposits on the surfaces of the groove 230 in thedeposition ring 208, as well as in the line of sight of the edge 252 ofthe cover ring 212. The modeling accuracy was determined with a test runof prototype hardware, and also by modeling geometry of knownperformance, to obtain the designs presented herein. It is seen thatchanging the shape and design configurations of the chamber componentsand the spaces and gaps therebetween, significantly changed thethickness of deposition material on the surfaces of the components.Further, the rate of increase in the amount of deposition on thedeposition ring remained at about the same for increasing distance fromthe substrate center as shown by the same angle of the linear sectionsof the graph between 0.5 and 1.5 on the x-axis. There is a verticalchange in the net amount of deposition for different configurations, butthe shape of the curve remains essentially the same.

The present invention has been described with reference to certainpreferred versions thereof; however, other versions are possible. Forexample, the process kit 200 and ring assembly 202 can be used in othertypes of applications, as would be apparent to one of ordinary skill,for example, etching, CVD and etching chambers. Other shapes andconfigurations of the deposition ring 208, cover ring 212, shield 150and anti-lift bracket 270 can also be used. Therefore, the spirit andscope of the appended claims should not be limited to the description ofthe preferred versions contained herein.

1. A deposition ring for placement about a substrate support in asubstrate processing chamber in which a plasma of process gas is formedto process the substrate, the support comprising a peripheral wall thatterminates before an overhanging edge of the substrate, and thedeposition ring comprising: (a) an annular band surrounding theperipheral wall of the support, the annular band comprising: (i) aninner lip that extends transversely from the annular band, issubstantially parallel to the peripheral wall of the support, andterminates below the overhanging edge of the substrate; (ii) a raisedridge; (iii) an inner open channel between the inner lip and the raisedridge, and that extends at least partially below the overhanging edge ofthe substrate; and (iv) a ledge radially outward of the raised ridge. 2.A deposition ring according to claim 1 wherein the raised ridge extendsalong the central portion of the band and has a flat top surface which,in use, is spaced apart from a cover ring to form a convoluted gaptherebetween.
 3. A deposition ring according to claim 1 wherein theinner channel has a first rounded corner joining to the inner lip and asloped surface joining to the raised ridge.
 4. A deposition ringaccording to claim 1 further comprising a U-shaped channel between theraised ridge and the ledge.
 5. A deposition ring according to claim 1wherein the annular band comprises stainless steel.
 6. A cover ring forat least partially covering a deposition ring having a raised ridge andan open inner channel, the cover and deposition rings being placed abouta substrate support in a substrate processing chamber in which a plasmaof process gas is formed to process the substrate, the supportcomprising a peripheral wall that terminates before an overhanging edgeof the substrate, and the cover ring comprising: (a) an annular wedgecomprising a footing which rests on a raised ridge of the depositionring, and an inclined surface that tapers to a projecting brim overlyingthe open inner channel of the deposition ring; and (b) one or morecylindrical walls extending downwardly from the annular wedge.
 7. Acover ring according to claim 6 wherein the raised ridge of thedeposition ring and the projecting brim of the cover ring define aconvoluted gap which impedes travel of plasma species through the gap.8. A cover ring according to claim 6 wherein the inclined surface of theannular wedge of the cover ring is inclined at an angle relative to anaxis that is perpendicular to a plane of the substrate, the angle beingof at least about 60°.
 9. A cover ring according to claim 6 wherein thecover ring comprises a pair of cylindrical walls located radiallyoutward of the footing.
 10. An cover ring according to claim 6 whereinthe cylindrical walls comprise inner and outer walls, the inner wallhaving a smaller height than the outer wall.
 11. A cover ring accordingto claim 6 wherein the inclined top surface of the projecting brim ofthe cover ring terminates in a rounded edge.
 12. A cover ring accordingto claim 11 wherein the projecting brim of the cover ring comprises aplanar bottom surface.
 13. A cover ring according to claim 11 whereinthe projecting brim further comprises a raised ridge before the roundededge.
 14. A cover ring according to claim 11 wherein the raised ridgehas an external shape with a profile which matches and follows thecontour of the surface of the underlying deposition ring.
 15. Anassembly according to claim 6 wherein the cover ring comprises titanium.16. A ring assembly for placement about a substrate support in asubstrate processing chamber in which a plasma of process gas is formedto process the substrate, the support comprising a peripheral wall thatterminates before an overhanging edge of the substrate, and the ringassembly comprising: (a) a deposition ring comprising an annular bandsurrounding the peripheral wall of the support, the annular bandcomprising: (i) an inner lip that extends transversely from the annularband, is substantially parallel to the peripheral wall of the support,and terminates below the overhanging edge of the substrate; (ii) araised ridge; (iii) an inner open channel between the inner lip and theraised ridge, and that extends at least partially below the overhangingedge of the substrate; and (iv) a ledge radially outward of the raisedridge; and (b) a cover ring at least partially covering the depositionring, the cover ring comprising: (i) an annular wedge comprising afooting which rests on the raised ridge of the deposition ring, and aninclined surface that tapers to a projecting brim overlying the openinner channel of the deposition ring; and (ii) one or more cylindricalwalls extending downwardly from the annular wedge, whereby the raisedridge and the cover ring define a convoluted gap which impedes travel ofplasma species through the gap.
 17. A holding assembly to retain adeposition ring about the periphery of a substrate support in asubstrate processing chamber, the deposition ring comprising aperipheral recessed pocket with a holding post, and the holding assemblycomprising: (a) a restraint beam comprising two ends, the restraint beamcapable of being attached to the substrate support; (b) an anti-liftbracket comprising: (i) a block comprising a through-channel to receivean end of a restraint beam; and (ii) a retaining hoop attached to theblock, the retaining hoop sized to slide over the holding post in theperipheral recessed pocket of the deposition ring, whereby, in use, thethrough-hole slides onto the restraint beam so that the retaining hoopencircles the holding post allowing the weight of the block to stablyhold the deposition ring to the support.
 18. A holding assemblyaccording to claim 17 further comprising a ceramic isolator that ispositioned between the anti-lift bracket and the restraint beam.
 19. Anassembly according to claim 18 wherein the ceramic isolator comprisesaluminum oxide.
 20. A unitary shield capable of encircling a sputteringsurface of a sputtering target that faces a substrate support in asubstrate processing chamber to reduce deposition of sputtering depositson the support and sidewalls of the chamber, the shield comprising: (a)a cylindrical outer band having a diameter sized to encircle thesputtering surface of the sputtering target and the substrate support,the outer band having upper and bottom ends, the upper end having anradially outwardly tapered surface adjacent to the sputtering target;(b) a base plane extending radially inward from the bottom end of theouter band; and (c) a cylindrical inner band joins to the base plate andat least partially surrounds the peripheral edge of the substratesupport.
 21. A shield according to claim 21 wherein the outer band, baseplate and inner band comprise a unitary structure.
 22. A shieldaccording to claim 21 wherein the inner band comprises a height that issmaller than the outer band.
 23. A heat exchanger for cooling acylindrical shield in a substrate processing chamber, the heat exchangercomprising: (a) a plate comprising a inner perimeter comprising acircular aperture sized to fit around a cylindrical shield; and (b) apolygon conduit in the plate to flow heat exchange fluid therethrough,the polygon conduit comprising a plurality of legs that areinterconnected in a polygonal pattern around the circular aperture, andthe polygonal conduit comprising an inlet and outlet.
 24. A heatexchanger according to claim 23 wherein the plate comprises an outerperimeter comprising hexagonal sides and wherein the legs are drilled atacute angles through the hexagonal sides.
 25. A heat exchanger accordingto claim 24 wherein the acute angles are from about 20 to about 45°. 26.A sputtering target capable of fitting within a shield and resting on anisolator in a substrate processing chamber, the sputtering targetcomprising: (a) a sputtering plate composed of a sputtering material tobe sputtered onto the substrate, the sputtering plate comprising asloped edge; (b) a backing plate for supporting the sputtering plate,the backing plate comprising a peripheral ledge which extends beyond thesloped edge of the sputtering plate, the peripheral ledge comprising afooting which rests on the isolator in the chamber, and an inner bumpwhich is shaped and sized to reduce deposition of sputtering deposits onthe isolator and shield.
 27. A target according to claim 26 wherein thebump comprises a curved cross-section with a height of from about 1.5 mmto about 2 mm.
 28. A target according to claim 26 wherein the backingplate comprises high strength aluminum alloy.
 29. A target according toclaim 26 wherein the sputtering plate comprising a sputtering surfacecomprising aluminum.
 30. A process kit for placement about a sputteringsurface of a sputtering target that faces a substrate support in asubstrate processing chamber to reduce deposition of sputtering depositson the support and sidewalls of the chamber, the support comprising aperipheral wall that terminates below an overhanging edge of thesubstrate and a restraint beam, the process kit comprising: (a) adeposition ring comprising an annular band surrounding the support, thedeposition ring having an inner lip extending transversely from theannular band, the inner lip being substantially parallel to theperipheral wall of the support and terminating below the overhangingedge of the substrate; a raised ridge; an inner open channel between theinner lip and the raised ridge, the inner open channel extending atleast partially below the overhanging edge of the substrate; a ledgeradially outward of the raised ridge; and a peripheral recessed pocketwith a holding post; (b) a cover ring at least partially covering thedeposition ring, the cover ring comprising an annular wedge comprising afooting which rests on the ridge of the deposition ring and having aninclined surface that tapers to a projecting brim overlying the openinner channel of the deposition ring, and one or more cylindrical wallsextending downwardly from the annular wedge; and (c) an anti-liftbracket comprising a block comprising a through-channel to receive anend of a restraint beam of the support and a retaining hoop sized toslide over the holding post in the recessed pocket of the depositionring.
 31. A process kit according to claim 30 wherein the depositionring further comprises an outer lip located radially outward of theraised ridge and extending transversely from the annular band.
 32. Aprocess kit according to claim 30 wherein the inclined surface of theannular wedge of the cover ring is inclined at an angle from theperpendicular to the substrate of at least about 60°.
 33. A process kitaccording to claim 30 wherein the cover ring comprises inner and outercylindrical walls, the inner wall having a smaller height than the outerwall.
 34. A process kit according to claim 30 wherein the inclined topsurface of the projecting brim of the cover ring terminates in a roundededge and has a planar bottom surface.
 35. A process kit according toclaim 30 wherein the block of the anti-lift bracket comprises a verticalthrough hole to receive a fastener to fasten the block to the support.36. A process kit according to claim 30 further comprising a unitaryshield comprising: (a) a cylindrical outer band having a diameter sizedto encircle the sputtering surface of the sputtering target and thesubstrate support, the outer band having upper and bottom ends, theupper end having an radially outwardly tapered surface adjacent to thesputtering target; (b) a base plane extending radially inward from thebottom end of the outer band; and (c) a cylindrical inner band joined tothe base plane and that at least partially surrounds the peripheral edgeof the substrate support.